Title :
Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup t/C4H/sub 9/)4 and Si(OC2H5)4 precursors
Author :
Xuan, Y. ; Yasuda, T.
Author_Institution :
Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Hafnium silicate films were successfully prepared by VALID using TEOS as the Si source. They show well behaved C-V characteristics, and their leakage current density was analysed.
Keywords :
MOS capacitors; atomic layer deposition; current density; dielectric thin films; ferroelectric materials; hafnium compounds; leakage currents; C-V characteristics; HfSiO; hafnium silicate films; leakage current density; vapor liquid hybrid deposition; Annealing; Atomic layer deposition; Chemical vapor deposition; Dielectric substrates; Hafnium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Temperature; Thickness control;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159175
