Title :
Electrical characteristics of rare-earth oxides stacked-layer structures
Author :
Ohmi, S. ; Ueda, I. ; Kobayashi, Y. ; Tsutsui, K. ; Iwai, H.
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
Abstract :
In this paper, Lu/sub 2/O/sub 3//La/sub 2/O/sub 3/ stacked layer structures of rare earth oxides were investigated. The La/sub 2/O/sub 3/ layer would be expected to form a uniform silicate layer with relatively high dielectric constant compared to SiO/sub 2/ after the annealing process so that the leakage current characteristics would be improved for the stacked layer structures compared to those of the single Lu/sub 2/O/sub 3/ layer.
Keywords :
lanthanum compounds; leakage currents; lutetium compounds; permittivity; rapid thermal annealing; thin films; Lu/sub 2/O/sub 3/-La/sub 2/O/sub 3/; Lu/sub 2/O/sub 3/-La/sub 2/O/sub 3/ stacked layer structures; annealing; dielectric constant; electrical properties; leakage current; rare-earth oxides stacked-layer structures; silicate layer; Annealing; CMOS technology; Capacitance-voltage characteristics; Dielectrics and electrical insulation; Electric variables; Frequency dependence; High K dielectric materials; High-K gate dielectrics; Leakage current; Semiconductor films;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159176
