DocumentCode :
2393525
Title :
Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition
Author :
Kawahara, Takaaki ; Torii, Kentaro ; Mitsuhashi, Riichirou ; Mutoh, Akiyoshi ; Horiuchi, Atsushi ; Ito, Hiroyuki ; Kitajima, Hiroshi
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
fYear :
2003
fDate :
6-7 Nov. 2003
Firstpage :
32
Lastpage :
37
Abstract :
In this paper, we investigated the influence of the combination of precursors on the deposition rate, the uniformity, the amount of residual impurities, together with electrical properties.
Keywords :
atomic layer deposition; dielectric thin films; electron mobility; field effect transistors; hafnium compounds; impurities; oxidation; Hf sources; HfAlO/sub x/; HfAlO/sub x/ films; NH/sub 3/ radicals; atomic layer deposition; electrical properties; oxidizing agents; residual impurities; Argon; Atomic layer deposition; Dielectric measurements; Hafnium; High K dielectric materials; High-K gate dielectrics; Impurities; Inductors; Plasma temperature; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
Type :
conf
DOI :
10.1109/IWGI.2003.159177
Filename :
1252502
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2393525
بازگشت