Title :
Charge state dependent point defect in high-k dielectric HfO2
Author :
Shiraishi, Kenji ; Saito, Mineo ; Ohno, Takahka
Author_Institution :
Inst. of Phys., Tsukuba Univ., Japan
Abstract :
In this paper, we have investigated the basic properties of O vacancies in HfO/sub 2/ by the first principle calculations. We have calculated the charge state dependent properties of an O vacancy in cubic-HfO/sub 2/.
Keywords :
ab initio calculations; dielectric materials; hafnium compounds; vacancies (crystal); HfO/sub 2/; O vacancies; charge state dependent point defect; first principle calculations; high-k dielectric HfO/sub 2/; Chemicals; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Materials reliability; Materials science and technology; Photonic band gap; Physics; Stability;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159178
