Title :
Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric
Author :
Chen, Ching-Wei ; Chien, Chao-Hsin ; Ou, Shih-Chich ; Perng, Tsu-Hsiu ; Lee, Da-Yuan ; Chen, Yi-Cheng ; Horng-Chich Lin ; Huang, Tiao-Yuan ; Chang, Chun-Yen
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.
Keywords :
MOSFET; annealing; dielectric materials; dielectric thin films; electron traps; hot carriers; nitridation; semiconductor device reliability; silicon compounds; 1.6 nm; Si/sub 3/N/sub 4/-SiO/sub 2/; annealing; deep submicron nMOSFET; gate leakage current; hot-electron-induced degradation; nitrogen incorporation; paramagnetic electron trap precursors; plasma nitridation; reliability; reliability degradation; ultrathin gate dielectric; Boron; Degradation; Dielectrics; Hot carriers; Leakage current; MOSFETs; Nitrogen; Plasmas; Tunneling; Voltage;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159183
