Title :
Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation
Author :
Inoue, M. ; Tsuchimoto, J. ; Mizutani, M. ; Yugami, J. ; Ohno, Y. ; Yoneda, M.
Author_Institution :
Process Dev. Dept., Renesas Technol. Corp., Hyogo, Japan
Abstract :
In this study, we used direct nitridation technique using N/sub 2/ plasma to from ultra-thin SiN gate dielectric and successfully fabricated poly-Si gate CMOS device with mass production compatible fabrication flow including source and drain silicidation and 1050/spl deg/C spike anneal. We also studied these SiN gate dielectrics from reliability including dielectric breakdown.
Keywords :
MIS capacitors; annealing; dielectric materials; dielectric thin films; electric breakdown; elemental semiconductors; nitridation; permittivity; plasma materials processing; silicon; silicon compounds; superconducting device reliability; 1050 degC; CMOS device; N/sub 2/ plasma direct nitridation; Si-SiN; annealing; dielectric breakdown; permittivity; reliability; ultra-thin SiN gate dielectric; Capacitance-voltage characteristics; Capacitors; Dielectric substrates; Plasma measurements; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Stress control; Voltage;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159184
