Title :
Effects of interactions between HfO2 and poly-Si on MOSCAP and MOSFET electrical behavior
Author :
Kaushik, V.S. ; Rohr, E. ; Gendt, S. De ; Delabie, A. ; Elshocht, S. Van ; Claes, M. ; Shi, X. ; Shimamoto, Y. ; Ragnarsson, LA ; Witters, T. ; Manabe, Y. ; Heyns, M.
Author_Institution :
Int. SEMATECH, Austin, TX, USA
Abstract :
In this paper, we report on the interactions between HfO/sub 2/ and poly-Si with varying HfO/sub 2/ films. The impact HfO/sub 2/ interaction on important parameters such as gate leakage, yield, flatband voltage and mobility were discussed.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; electron mobility; elemental semiconductors; hafnium compounds; silicon; HfO/sub 2/; HfO/sub 2/-Si interaction; MOSFET; Si; electrical properties; electron mobility; flatband voltage; gate leakage; Capacitors; Conferences; Crystallization; Electrodes; Hafnium oxide; MOSFET circuits; Silicon compounds; Transconductance; Very large scale integration; Voltage;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159185
