Title :
Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes
Author :
Muto, Akiyoshi ; Ohji, Hiroshi ; Kawahara, Takaaki ; Maeda, Takeshi ; Torii, Kentaro ; Kitajima, Hiroshi
Author_Institution :
Res. Dept. I, Semicond. Leading Edge Technol. Inc, Tsukuba, Japan
Abstract :
In this study, we investigated the growth manner of poly-Si/poly-SiGe layered films on HfAlO/sub x/ films with various Hf contents. The effect of the poly-SiGe gate electrode on FET performances was also evaluated.
Keywords :
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; field effect transistors; semiconductor growth; semiconductor thin films; silicon; FET; HfAlO/sub x/; HfAlO/sub x/ films; HfAlO/sub x/ gate dielectrics; Si-SiGe; poly-Si-poly-SiGe layered films; poly-SiGe gate electrodes; Annealing; Electrodes; FETs; Germanium silicon alloys; Hafnium; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Silicon germanium; Temperature;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159186
