Title :
Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices
Author :
Lucovsky, G. ; Phillips, J.C.
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Self-organized Si suboxide (SiO/sub x/, x<2) interfacial layers were characterised by medium energy ion scattering, single wavelength ellipsometry, synchrotron X-ray photoelectron spectroscopy and optical second harmonic generation.
Keywords :
X-ray photoelectron spectra; dielectric materials; dielectric thin films; ion-surface impact; optical harmonic generation; reliability; silicon compounds; Si-SiO/sub 2/; medium energy ion scattering; optical second harmonic generation; reliability; self-organized Si suboxide interfacial layers; single wavelength ellipsometry; synchrotron X-ray photoelectron spectroscopy; Annealing; Bonding; Dielectric substrates; Dielectric thin films; Ellipsometry; Optical scattering; Spectroscopy; Tensile stress; Thermal stresses; X-ray scattering;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159187
