Title :
Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices
Author :
Lin, H.-C. ; Lee, D.-Y. ; Ou, S.-C. ; Chien, C.-H. ; Huang, T.-Y.
Author_Institution :
Nat.Nano Device Labs., Hsin-Chu, Taiwan
Abstract :
In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.
Keywords :
MOSFET; hole traps; recovery; stress relaxation; PMOS devices; hole trapping; n-channel MOSFET; negative bias temperature instability degradation; p-channel MOSFET; recovery; CMOS technology; Degradation; Dielectrics; Interface states; MOS devices; Niobium compounds; Nitrogen; Stress; Temperature; Titanium compounds;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159188
