DocumentCode
2393738
Title
Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics
Author
Hinkle, C.L. ; Fulton, C. ; Nemanich, R.J. ; Lucovsky, G.
Author_Institution
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
80
Lastpage
85
Abstract
We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.
Keywords
MOS capacitors; WKB calculations; conduction bands; dielectric materials; hafnium compounds; permittivity; resonant tunnelling; silicon compounds; HfO/sub 2/; SiO/sub 2/; conduction band offset energy; electron tunneling mass; gate dielectrics; quantum mechanical WKB-approximation; resonant tunneling; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Dielectric constant; Dielectric substrates; Electrons; High K dielectric materials; High-K gate dielectrics; Plasmas; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159189
Filename
1252514
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