Title :
Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics
Author :
Hinkle, C.L. ; Fulton, C. ; Nemanich, R.J. ; Lucovsky, G.
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
We report on a novel method for obtaining the electron tunneling mass-conduction band offset energy products for high-k gate dielectrics based on a quantum mechanical WKB-approximation.
Keywords :
MOS capacitors; WKB calculations; conduction bands; dielectric materials; hafnium compounds; permittivity; resonant tunnelling; silicon compounds; HfO/sub 2/; SiO/sub 2/; conduction band offset energy; electron tunneling mass; gate dielectrics; quantum mechanical WKB-approximation; resonant tunneling; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Dielectric constant; Dielectric substrates; Electrons; High K dielectric materials; High-K gate dielectrics; Plasmas; Resonant tunneling devices;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159189
