Title :
Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition
Author :
Shimizu, Takashi ; Ishii, Kenichi ; Suzuki, Eiichi
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.
Keywords :
MOCVD coatings; MOSFET; lanthanum compounds; ruthenium; thin films; La-oxide gate insulator; MOSFET; Ru gate electrode; Ru-LaO; electrical properties; metalorganic chemical vapor deposition; Chemical vapor deposition; Dielectric substrates; Dielectrics and electrical insulation; Electrodes; High K dielectric materials; High-K gate dielectrics; MOCVD; MOSFET circuits; Metal-insulator structures; Temperature;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159191
