Title :
Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation
Author :
Uedono, A. ; Mitsuhashi, R. ; Horiuchi, A. ; Torii, K. ; Yamabe, K. ; Yamada, K. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Japan
Abstract :
In this article, we used monoenergetic positron beams to study defects in thin HfAlO/sub x/ films deposited on Si substrates. The positrons implanted into HfAlO/sub x/ were found to annihilate from the trapped state in open spaces; the size of the open spaces was larger than that of point defects such as monovacancies or divacancies.
Keywords :
S-parameters; dielectric materials; dielectric thin films; hafnium compounds; positron annihilation; vacancies (crystal); HfAlO/sub x/ gate dielectrics; HfAlO/sub x/-SiON-Si; MOS structures; Si substrates; divacancies; monoenergetic positron beams; monovacancies; point defects; positron annihilation; thin HfAlO/sub x/ films; trapped state; Atmospheric measurements; CMOS technology; Electrons; Energy measurement; High K dielectric materials; High-K gate dielectrics; Materials science and technology; Personal digital assistants; Positrons; Semiconductor films;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159197
