• DocumentCode
    2394035
  • Title

    Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

  • Author

    Kawae, T. ; Minemura, Y. ; Fukuda, S. ; Hirano, T. ; Suzuki, Y. ; Saito, M. ; Kadomura, S. ; Samukawa, S.

  • Author_Institution
    Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.
  • Keywords
    MOSFET; dielectric thin films; nitridation; plasma materials processing; silicon compounds; 90 nm; NBTI lifetime; SiON; SiON film; negative bias temperature instability; plasma nitridation; shallow nitrogen profile; Apertures; FETs; Low voltage; Niobium compounds; Nitrogen; Plasma applications; Plasma materials processing; Plasma measurements; Semiconductor films; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159202
  • Filename
    1252527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394035