Title :
Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation
Author :
Kawae, T. ; Minemura, Y. ; Fukuda, S. ; Hirano, T. ; Suzuki, Y. ; Saito, M. ; Kadomura, S. ; Samukawa, S.
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
Abstract :
The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.
Keywords :
MOSFET; dielectric thin films; nitridation; plasma materials processing; silicon compounds; 90 nm; NBTI lifetime; SiON; SiON film; negative bias temperature instability; plasma nitridation; shallow nitrogen profile; Apertures; FETs; Low voltage; Niobium compounds; Nitrogen; Plasma applications; Plasma materials processing; Plasma measurements; Semiconductor films; Titanium compounds;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159202
