• DocumentCode
    2394065
  • Title

    Comparative study of carrier mobility and threshold voltage between N- and p-MOSFETs in TaN gate CMOS with EOT = 1.5-2 nm HfAlOx

  • Author

    Ota, H. ; Hisamatsu, H. ; Yasuda, N. ; Mizubayashi, W. ; Ohno, M. ; Iwamoto, K. ; Tominaga, K. ; Kadoshima, M. ; Yamagishi, N. ; Akiyama, K. ; Yamamoto, K. ; Nabatame, T. ; Horikawa, T. ; Toriumi, A.

  • Author_Institution
    Adv. Semicond. Res. Center, AIST, Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    158
  • Lastpage
    163
  • Abstract
    This paper demonstrates the performances of fabricated metal gate CMOS, and then focuses on fundamental issues of high-k CMOS. It is shown that a comparative study between n- and p-MOSFETs provides useful information on the V/sub th/ instability and the degradation.
  • Keywords
    MOSFET; carrier mobility; dielectric thin films; hafnium compounds; leakage currents; tantalum compounds; 1.5 to 2 nm; HfAlO/sub x/; TaN; carrier mobility; gate CMOS; n-MOSFET; p-MOSFET; threshold voltage; CMOS process; CMOS technology; Capacitance measurement; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Materials science and technology; Thermal degradation; Threshold voltage; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159204
  • Filename
    1252529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394065