Title :
Comparative study of carrier mobility and threshold voltage between N- and p-MOSFETs in TaN gate CMOS with EOT = 1.5-2 nm HfAlOx
Author :
Ota, H. ; Hisamatsu, H. ; Yasuda, N. ; Mizubayashi, W. ; Ohno, M. ; Iwamoto, K. ; Tominaga, K. ; Kadoshima, M. ; Yamagishi, N. ; Akiyama, K. ; Yamamoto, K. ; Nabatame, T. ; Horikawa, T. ; Toriumi, A.
Author_Institution :
Adv. Semicond. Res. Center, AIST, Tsukuba, Japan
Abstract :
This paper demonstrates the performances of fabricated metal gate CMOS, and then focuses on fundamental issues of high-k CMOS. It is shown that a comparative study between n- and p-MOSFETs provides useful information on the V/sub th/ instability and the degradation.
Keywords :
MOSFET; carrier mobility; dielectric thin films; hafnium compounds; leakage currents; tantalum compounds; 1.5 to 2 nm; HfAlO/sub x/; TaN; carrier mobility; gate CMOS; n-MOSFET; p-MOSFET; threshold voltage; CMOS process; CMOS technology; Capacitance measurement; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Materials science and technology; Thermal degradation; Threshold voltage; Thyristors;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159204
