DocumentCode
2394082
Title
Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics
Author
Ono, Mizuki ; Ishihara, Takamitsu ; Nishiyama, Akira
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear
2003
fDate
6-7 Nov. 2003
Firstpage
164
Lastpage
167
Abstract
The influence of the dielectric constant distribution on the electron mobility determined by remote Coulomb scattering due to fixed charges in gate dielectrics and ionized impurities in gate electrodes using numerical simulations and a physical model were investigated.
Keywords
MOSFET; dielectric materials; electron mobility; impurities; numerical analysis; permittivity; semiconductor device models; dielectric constant; electron mobility; ionized impurities; numerical simulations; physical model; remote Coulomb scattering; stacked gate dielectrics; Dielectric constant; Dielectric substrates; Electrodes; Electron mobility; High K dielectric materials; High-K gate dielectrics; Impurities; MOSFETs; Partial response channels; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159205
Filename
1252530
Link To Document