Title :
Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics
Author :
Ono, Mizuki ; Ishihara, Takamitsu ; Nishiyama, Akira
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The influence of the dielectric constant distribution on the electron mobility determined by remote Coulomb scattering due to fixed charges in gate dielectrics and ionized impurities in gate electrodes using numerical simulations and a physical model were investigated.
Keywords :
MOSFET; dielectric materials; electron mobility; impurities; numerical analysis; permittivity; semiconductor device models; dielectric constant; electron mobility; ionized impurities; numerical simulations; physical model; remote Coulomb scattering; stacked gate dielectrics; Dielectric constant; Dielectric substrates; Electrodes; Electron mobility; High K dielectric materials; High-K gate dielectrics; Impurities; MOSFETs; Partial response channels; Scattering;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159205
