• DocumentCode
    2394109
  • Title

    In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system

  • Author

    Aoyama, Tomonori ; Kamiyama, Satoshi ; Tamura, Yasuyuki ; Sasaki, Takaoki ; Mitsuhashi, Riichirou ; Torii, Kazuyoshi ; Kitajima, Hiroshi ; Arikado, Tsunetoshi

  • Author_Institution
    Res. Dept. I, Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
  • fYear
    2003
  • fDate
    6-7 Nov. 2003
  • Firstpage
    174
  • Lastpage
    179
  • Abstract
    In this paper, we propose the novel HfSiON fabrication process using hot wall batch system, metal organic chemical vapor deposition and post deposition annealing. Properties of FETs with the HfSiON gate dielectric formed by these novel processes are also reported.
  • Keywords
    MOCVD; annealing; dielectric materials; dielectric thin films; field effect transistors; hafnium compounds; silicon compounds; FET; HfSiON-SiO/sub 2/; hot wall batch system; in situ HfSiON/SiO/sub 2/ gate dielectric fabrication; metal organic chemical vapor deposition; post deposition annealing; Annealing; Dielectric substrates; FETs; Fabrication; Fluid flow; Hafnium; Hydrogen; MOCVD; Nitrogen; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
  • Conference_Location
    Toyko, Japan
  • Print_ISBN
    4-89114-037-2
  • Type

    conf

  • DOI
    10.1109/IWGI.2003.159207
  • Filename
    1252532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2394109