DocumentCode
2394180
Title
New paradigm for technology and business beyond 0.1 μm node
Author
Nakatsuka, Haruo
Author_Institution
Appl. Mater. Japan Inc., Tokyo, Japan
fYear
2003
fDate
6-8 Oct. 2003
Firstpage
1
Lastpage
3
Abstract
This paper deals about the technological turning points, economical turning points in LSI.
Keywords
MOS integrated circuits; MOSFET; electronics industry; integrated circuit economics; large scale integration; leakage currents; LSI technology; economical turning points; leakage current; Broadband communication; Consumer electronics; Costs; Economic indicators; Investments; Moore´s Law; Random access memory; Semiconductor device manufacture; Silicon; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252536
Filename
1252536
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