DocumentCode :
23944
Title :
Application of the Kirchhoff Transform to Thermal Spreading Problems With Convection Boundary Conditions
Author :
Bagnall, Kevin R. ; Muzychka, Yuri S. ; Wang, E.N.
Author_Institution :
Dept. of Mech. Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
4
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
408
Lastpage :
420
Abstract :
Thermal management and thermal analysis of microelectronic devices and packages are critical in ensuring the performance, reliability, and lifetime of today´s electronic systems. When the thermal conductivity of a semiconductor or packaging material depends strongly on temperature, the use of a constant thermal conductivity value may significantly underestimate the temperature rise and thermal resistance. The Kirchhoff transform provides a convenient way of linearizing the heat conduction equation to use computationally efficient analytical solutions to calculate the device or package temperature. In the past, the application of the Kirchhoff transform has been restricted to temperature and heat flux boundary conditions in thermal spreading problems. In this paper, we developed an approximate solution for the application of the Kirchhoff transform to thermal spreading problems with convection in the sink plane and show the technique to be accurate to within 1% for relevant problems in device-level thermal analysis. The proposed technique is combined with a recently developed analytical solution for temperature rise in complex, multilayered structures in which a finite heat transfer coefficient in the sink plane needs to be considered. These analytical expressions and the Kirchhoff transform are valuable tools for accurately predicting the temperature in high-power, wide bandgap electronics, such as gallium nitride power amplifiers.
Keywords :
convection; cooling; high electron mobility transistors; semiconductor device reliability; thermal analysis; thermal conductivity; thermal management (packaging); thermal resistance; HEMTs; Kirchhoff transform; constant thermal conductivity value; convection boundary conditions; device-level thermal analysis; electronic systems; finite heat transfer coefficient; gallium nitride power amplifiers; heat conduction equation; heat flux boundary conditions; high-electron mobility transistors; microelectronic devices; multilayered structures; package temperature; packaging material; reliability; sink plane; temperature rise; thermal management; thermal resistance; thermal spreading problems; wide bandgap electronics; Boundary conditions; Conductivity; Electronic packaging thermal management; Heat transfer; Heating; Transforms; Gallium nitride (GaN) high-electron mobility transistors (HEMTs); Kirchhoff transform; heat conduction; temperature-dependent thermal conductivity; thermal management; thermal spreading resistance;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2013.2292584
Filename :
6683035
Link To Document :
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