Title :
A novel short-gate carbon nanotube thin film transistors
Author :
Wei, Jeng-Hua ; Wang, Hung-Hsiang ; Chen, Hsin-Hui ; Lai, Ming-Jiunn ; Kao, Ming-Jer ; Tsai, Ming-Jinn
Author_Institution :
Novel Device Technol. Dept. I, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to explain these differences.
Keywords :
carbon nanotubes; conduction bands; electrical conductivity; insulated gate bipolar transistors; insulated gate field effect transistors; nanotube devices; plasma CVD; semiconductor growth; semiconductor materials; thin film transistors; C; ambipolar behaviour; band diagram; carbon nanotube FET; short-gate carbon nanotube thin film transistors; transport model; Carbon nanotubes; Charge carrier processes; Electrons; FETs; Insulation; Intrusion detection; Protection; Silicon; Temperature; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252547
