DocumentCode
2394416
Title
A novel short-gate carbon nanotube thin film transistors
Author
Wei, Jeng-Hua ; Wang, Hung-Hsiang ; Chen, Hsin-Hui ; Lai, Ming-Jiunn ; Kao, Ming-Jer ; Tsai, Ming-Jinn
Author_Institution
Novel Device Technol. Dept. I, Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2003
fDate
6-8 Oct. 2003
Firstpage
42
Lastpage
45
Abstract
In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to explain these differences.
Keywords
carbon nanotubes; conduction bands; electrical conductivity; insulated gate bipolar transistors; insulated gate field effect transistors; nanotube devices; plasma CVD; semiconductor growth; semiconductor materials; thin film transistors; C; ambipolar behaviour; band diagram; carbon nanotube FET; short-gate carbon nanotube thin film transistors; transport model; Carbon nanotubes; Charge carrier processes; Electrons; FETs; Insulation; Intrusion detection; Protection; Silicon; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252547
Filename
1252547
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