Minimized constrains for lateral profiling of hot-carrier-induced oxide charges and interface traps in MOSFETs

The lateral profile of oxide trap charge (Q_ot) and interface traps (N_it) is crucial for improving the reliability of MOSFET and flash memory device. A charge pumping technique has been shown to profile the Q_ot and N_it directly from the experimental results. However, the neutralization condition is acquired by trial and error, which takes much time and effort. Therefore, a technique of two-step neutralization is proposed to find out the appropriate neutralization condition in this work, which is effectively applied to this profiling technique to various dimension and structures of devices. This two-step neutralization combined with the error-reduction method is expected to profile Q_ot and N_it more quickly and precisely.