DocumentCode :
2394460
Title :
La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide
Author :
Huang, C.H. ; Lin, C.Y. ; Li, H.Y. ; Chen, W.J. ; Chin, Albert ; Mei, P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2003
fDate :
6-8 Oct. 2003
Firstpage :
52
Lastpage :
55
Abstract :
We have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm2/V-s in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm2/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/□ and small junction leakage currents of 3×10-8 A/cm2 and 2×10-7 A/cm2 for respective P+N and N+P junctions.
Keywords :
Ge-Si alloys; MOSFET; electric resistance; hole mobility; lanthanum compounds; leakage currents; nickel compounds; semiconductor materials; La2O3-Si0.3Ge0.7; La2O3/Si0.3Ge0.7 p-MOSFET; Ni germanosilicide; NiSi0.3Ge0.7; hole mobility; junction leakage current; sheet resistance; Annealing; Diffraction; Electrons; Germanium silicon alloys; Ion implantation; Leakage current; MOSFET circuits; Silicon germanium; Voltage; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN :
1524-766X
Print_ISBN :
0-7803-7765-6
Type :
conf
DOI :
10.1109/VTSA.2003.1252550
Filename :
1252550
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2394460
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