Title :
Analysis and modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
Author :
Kim, Keunwoo ; Chuang, Ching-Te ; Rim, Kern ; Cai, Jin ; Haensch, Wilfried E.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Compact physical models for SSOI MOSFETs are presented. The models consider strained-Si device features including mobility enhancement and band offsets with SSOI specific floating-body effect. The model validity is confirmed by fabricated 70 nm bulk strained-Si device.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; energy gap; semiconductor device models; silicon; silicon-on-insulator; 70 nm; Si; band offsets; compact physical models; floating-body effect; mobility enhancement; strained-Si channel-on-insulator MOSFET; CMOS technology; Circuits; Germanium silicon alloys; Lattices; MOSFETs; Predictive models; Semiconductor device modeling; Silicon germanium; Tunneling; Voltage control;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252551
