DocumentCode
2394485
Title
Analysis and modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
Author
Kim, Keunwoo ; Chuang, Ching-Te ; Rim, Kern ; Cai, Jin ; Haensch, Wilfried E.
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2003
fDate
6-8 Oct. 2003
Firstpage
56
Lastpage
59
Abstract
Compact physical models for SSOI MOSFETs are presented. The models consider strained-Si device features including mobility enhancement and band offsets with SSOI specific floating-body effect. The model validity is confirmed by fabricated 70 nm bulk strained-Si device.
Keywords
MOSFET; carrier mobility; elemental semiconductors; energy gap; semiconductor device models; silicon; silicon-on-insulator; 70 nm; Si; band offsets; compact physical models; floating-body effect; mobility enhancement; strained-Si channel-on-insulator MOSFET; CMOS technology; Circuits; Germanium silicon alloys; Lattices; MOSFETs; Predictive models; Semiconductor device modeling; Silicon germanium; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252551
Filename
1252551
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