Characterization and modeling of 100 nm RF generic CMOS and 500 nm RF power CMOS

Author

Lin, Yo-Sheng ; Lee, Tai-Hsing ; Liang, Hsiao-Bin ; Lu, Shey-Shi

Author_Institution

Dept. of Electr. Eng., Nat. Chi-Nan Univ., Puli, Taiwan

fYear

2003

fDate

6-8 Oct. 2003

Firstpage

105

Lastpage

108

Abstract

In this paper, we propose a new wide-band RF-CMOS model, which includes a complete silicon substrate network. A method to extract every parameter of this model is also developed. Excellent agreement between measurement and simulation up to 40 GHz is achieved for 100 nm and 500 nm CMOS devices under study. In addition, the kink phenomenon (anomalous dip) of scattering parameters S₁₁ and S₂₂ that usually appears in leading-edge RF CMOS devices with sub-130 nm gate-length or RF power CMOS devices is quantitatively analyzed for the first time.

Keywords

CMOS integrated circuits; MOSFET; S-parameters; elemental semiconductors; radiofrequency integrated circuits; semiconductor device models; silicon; 100 nm; 130 nm; 500 nm; RF generic CMOS; RF power CMOS; Si; modeling; scattering parameters; silicon substrate; simulation; wide-band RF-CMOS model; Circuits; Current measurement; Fingers; Impedance; MOS devices; Poles and zeros; Radio frequency; Scattering parameters; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2003 International Symposium on

ISSN

1524-766X

Print_ISBN

0-7803-7765-6

Type

conf

DOI

10.1109/VTSA.2003.1252563

Filename

1252563