Characterization and modeling of 100 nm RF generic CMOS and 500 nm RF power CMOS

In this paper, we propose a new wide-band RF-CMOS model, which includes a complete silicon substrate network. A method to extract every parameter of this model is also developed. Excellent agreement between measurement and simulation up to 40 GHz is achieved for 100 nm and 500 nm CMOS devices under study. In addition, the kink phenomenon (anomalous dip) of scattering parameters S₁₁ and S₂₂ that usually appears in leading-edge RF CMOS devices with sub-130 nm gate-length or RF power CMOS devices is quantitatively analyzed for the first time.