Title :
Optimized noise and consistent RF model for 0.18 μm MOSFETs
Author :
Huang, C.H. ; Li, H.Y. ; Chin, Albert ; Liang, V. ; Chien, S.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Strong dependence of finger number on minimum noise figure (NFmin) is observed in 0.18 μm MOSFETs. A lowest NFmin of 0.93 dB is measured at 5.8 GHz using 50 fingers but increases as either increasing or decreasing finger number. We have used a self-consistent S-parameter and NFmin model to analysis this abnormal finger number dependence, and the reason is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number.
Keywords :
MOSFET; S-parameters; semiconductor device models; semiconductor device noise; 0.18 micron; 0.93 dB; 5.8 GHz; MOSFET; consistent RF model; finger number; gate resistance; noise figure; optimized noise; self consistent S-parameter; Active noise reduction; Circuit noise; Electrical resistance measurement; Fingers; Frequency measurement; Integrated circuit noise; MOSFETs; Noise measurement; Noise reduction; Radio frequency;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252564
