DocumentCode
2394749
Title
Optimal SiGe:C HBT module for BiCMOS applications
Author
Lai, L.S. ; Liang, C.S. ; Chen, P.S. ; Hsu, Y.M. ; Liu, Y.H. ; Tseng, Y.T. ; Lu, S.C. ; Tsai, M. -J ; Liu, C.W. ; Rosenblad, C. ; Buschbaum, T. ; Buschbeck, M. ; Ram, J.
Author_Institution
Itri, Electron. Res. & Service Organ., Hsinchu, Taiwan
fYear
2003
fDate
6-8 Oct. 2003
Firstpage
113
Lastpage
116
Abstract
In this article, the effect of carbon doping in the SiGe layer with optimal base profile to achieve a high performance of SiGe:C HBT was evaluated. This SiGe:C module possesses a higher thermal stability during HBT processing, which is suitably integrated with a gate-after-base BiCMOS technology.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; modules; semiconductor doping; semiconductor materials; thermal stability; BiCMOS technology; SiGe:C; SiGe:C HBT module; carbon doping; optimal base profile; thermal stability; Annealing; BiCMOS integrated circuits; Boron alloys; Capacitive sensors; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Technology forecasting; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252565
Filename
1252565
Link To Document