Title :
Competitive advantage of SOI from dynamic threshold shifts and reduced capacitance
Author :
Ketchen, Mark B.
Author_Institution :
Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this paper, capacitance reduction and drive enhancement as a consequence of partially depleted SOI floating body topology.
Keywords :
field effect transistors; silicon-on-insulator; topology; Si; capacitance reduction; partially depleted SOI floating body topology; threshold shift; Capacitance measurement; Delay; Hardware; Immune system; Inverters; Logic gates; Performance gain; Threshold voltage; Time measurement; Topology;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252569
