Towards the fully integration of wireless front-end circuits in deep-submicron technologies

Author

Steyaert, Michiel

Author_Institution

Katholieke Univ. Leuven, Heverlee, Belgium

fYear

2003

fDate

6-8 Oct. 2003

Firstpage

133

Lastpage

136

Abstract

Since several years the research in the possibilities of CMOS technologies for RF applications is growing enormously. The trend towards deep sub-micron technologies allows the operation frequency of CMOS circuits above 1GHz, which opens the way to integrated CMOS RF circuits. Several research groups have developed high performance down-converters, low phase noise voltage controlled oscillators and dual modulus prescalers in standard CMOS technologies. The research has already demonstrated fully integrated receivers and synthesizers with no external components, nor tuning or trimming. Further research on low noise amplifiers, power amplifiers, synthesisers has recently resulted in fully integrated CMOS RF transceivers for DCS-1800 and Bluetooth applications.

Keywords

CMOS integrated circuits; frequency convertors; frequency synthesizers; integrated circuit noise; phase noise; power amplifiers; radiofrequency amplifiers; transceivers; CMOS RF circuit; CMOS RF transceiver; CMOS technology; bluetooth application; converter; integrated receiver; integrated synthesizers; low noise power amplifier; low phase noise voltage controlled oscillator; wireless front end circuit; CMOS technology; Circuit optimization; Integrated circuit technology; Low-noise amplifiers; Phase noise; Radio frequency; Radiofrequency amplifiers; Standards development; Synthesizers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2003 International Symposium on

ISSN

1524-766X

Print_ISBN

0-7803-7765-6

Type

conf

DOI

10.1109/VTSA.2003.1252570

Filename

1252570