DocumentCode
2394850
Title
A fully integrated 2.4 GHz RF transceiver by 0.18 μm CMOS technologies
Author
Kuo, Chin-Wei ; Ho, Chien-Chih ; Hsiao, Chao-Chih ; Chan, Yi-Jen
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fYear
2003
fDate
6-8 Oct. 2003
Firstpage
137
Lastpage
139
Abstract
A fully integrated 2.4 GHz RF CMOS transceiver is presented in this report, which consumes 80 mW for the receiver operation, and 56 mW for the transmitter one. The transceiver was designed in an integrated form and fabricated by a 0.18 μm standard CMOS process; all the matching networks and bias circuits were fabricated on the same chip. The receiver demonstrates a 7.5 dB conversion gain and the maximum output power of -5 dBm. The transmitter delivers a power gain of 18.5 dB, and the maximum output power of 12 dBm.
Keywords
CMOS integrated circuits; integrated circuit design; transceivers; RF CMOS transceiver; bias circuit; matching network; transmitter; CMOS technology; Circuits; Impedance matching; Power generation; RF signals; Radio frequency; Radiofrequency amplifiers; Transceivers; Transmitters; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252571
Filename
1252571
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