DocumentCode
2395028
Title
High Power, Light Activated Switching: Experiment And Applications
Author
Giorgi, D.M. ; Griffin, A.H. ; Hargis, D.E. ; McIntyre, I.A. ; Zucker, O.S.F.
Author_Institution
Energy Compression Research Corporation
fYear
1991
fDate
16-19 June 1991
Firstpage
122
Lastpage
125
Abstract
We present experimental results on the high power operation of light activated silicon junction switches, mounted on a low impedance transmission line structure and which are activated by a Nd:YAG laser to operate in the linear regime. We have operated the switch repetitively at a power level of 118 MW, with a pulse rise time of 32 psec. Two switches have been demonstrated operating coherently in parallel and several switches have operated in series to generate a multi- cycle microwave waveform. The switch has also opened 6.4 kA in 4 ns by sweeping out the photogenerated carriers. Many of these experimental results are records for this class of switch. Taken together, these results demonstrate the superiority and flexibility of the light activated silicon junction switch technology can be employed in pulsed power systems and microwave sources e.g., in electronic warfare, radar and communications.
Keywords
Circuits; Communication switching; Impedance; Jitter; Optical materials; Optical pumping; Optical switches; Photoconducting materials; Pulse power systems; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0177-3
Type
conf
DOI
10.1109/PPC.1991.733248
Filename
733248
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