Title :
6 GHz SiGe power amplifier with on-chip transformer combining
Author :
Gruner, Daniel ; Boeck, Georg
Author_Institution :
Berlin Univ. of Technol., Berlin
fDate :
Oct. 29 2007-Nov. 1 2007
Abstract :
The design synthesis of an innovative power amplifier topology is presented. It consists of two efficient push- pull stages whose output powers are combined by a monolithic three-port transformer. The design and optimization of the on- chip transformers have been performed within a 2.5-D electromagnetic simulation environment. The integrated power amplifier is targeted for a SiGe HBT technology. It achieves a power added efficiency of 43.5% and an output power of 28.3 dBm at a frequency of 6 GHz. The comparison of the proposed amplifier to a conventional push-pull amplifier has been carried out and the advantages of the new architecture over the conventional power amplifier are shown.
Keywords :
germanium alloys; heterojunction bipolar transistors; microwave amplifiers; network topology; power amplifiers; power transformers; silicon alloys; HBT technology; SiGe; design synthesis; electromagnetic simulation environment; frequency 6 GHz; integrated power amplifier; onchip transformer; power amplifier topology; push-pull amplifier; three-port transformer; Design optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Microwave amplifiers; Power amplifiers; Power generation; Silicon germanium; Topology; SiGe microwave power amplifiers; monolithic transformers; transformer combining;
Conference_Titel :
Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International
Conference_Location :
Brazil
Print_ISBN :
978-1-4244-0661-6
Electronic_ISBN :
978-1-4244-0661-6
DOI :
10.1109/IMOC.2007.4404377
