A New Simple Model for the Single-Electron Transistor (SET)

Author

Ismail, M.Y.A. ; AbdelRassoul, R.A.

Author_Institution

Arab Acad. for Sci. & Technol., Alexandria

fYear

2006

fDate

Dec. 2006

Firstpage

7

Lastpage

10

Abstract

We present a new model for simulating the I-V characteristics of a single-electron transistor (SET) at the steady-state mode based on a reduced master equation (ME) method. The model is accurate, fast and less numerically intensive. A comparison is made between SET simulation using our model and that generated by the model based on full master equation method of the quantum transport (QT) research group at Delft University, which considers all possible charge states in the tunnel junction. The comparison shows that results of our fast model are in excellent agreement with QT´s results at low bias conditions, but show some deviation at large bias, the footnote at the bottom of this column

Keywords

master equation; quantum theory; semiconductor device models; single electron transistors; Delft University; I-V characteristics; master equation method; quantum transport; single-electron transistor; tunnel junction; Conducting materials; Equations; Insulation; Metal-insulator structures; Quantum mechanics; Semiconductor device modeling; Single electron transistors; Steady-state; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

MEMS, NANO and Smart Systems, The 2006 International Conference on

Conference_Location

Cairo

Print_ISBN

1-4244-0899-7

Type

conf

DOI

10.1109/ICMENS.2006.348205

Filename

4155222