DocumentCode
2395196
Title
Wafer Level Package Using Polymer Bonding of Thick SU-8 Photoresist
Author
Na, Kyounghwan ; Kim, Hwan, III ; Lee, Eunsung ; Kim, Hyeon Cheol ; Lee, Yong-Hwan ; Chun, Kukjin
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.
fYear
2006
fDate
Dec. 2006
Firstpage
31
Lastpage
34
Abstract
For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, thickness of spacer and size and shape of pattern can be easy to control. This paper presents polymer bonding with thick, uniform and patterned spacing layer using SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and is cured at 95degC and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with 400 mum of thickness and 3.25% of uniformity through single coating. Also we performed silicon to glass bonding with thick, uniform and patterned spacing layer of SU-8 photoresist for wafer level package
Keywords
adhesive bonding; glass; photoresists; silicon; wafer bonding; wafer level packaging; 400 micron; 95 C; SU-8 2100 photoresist; SU-8 layer; Si; adhesion strength; glass bonding; negative photoresist; polymer bonding; spin coater; wafer level package; wafer rotating system; Glass; Optical devices; Optical polymers; Packaging; Resists; Shape control; Silicon; Temperature; Wafer bonding; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
MEMS, NANO and Smart Systems, The 2006 International Conference on
Conference_Location
Cairo
Print_ISBN
1-4244-0899-7
Type
conf
DOI
10.1109/ICMENS.2006.348211
Filename
4155228
Link To Document