• DocumentCode
    2395327
  • Title

    Anisotropic thermal conductivity of nano-porous silica film

  • Author

    Tsui, Bing-Yue ; Yang, Chen-Chi ; Fang, Kuo-Lung

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2003
  • fDate
    2003
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    In this work thermal conductivity of porous silica film was studied comprehensively. Silica films with porosity from 21% to 64% were spin coated. It is observed for the first time that the porous silica material has strong anisotropic characteristic. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. We proposed a serial-parallel hybrid model to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the RC delay simulation of the circuits.
  • Keywords
    dielectric thin films; nanoporous materials; permittivity; porosity; silicon compounds; spin coating; thermal conductivity; RC delay simulation; SiO2; anisotrophic thermal conductivity; anisotropic dielectric constant; dielectric film; nanoporous silica film; serial-parallel hybrid model; spin coating; Anisotropic conductive films; Anisotropic magnetoresistance; Circuit simulation; Conducting materials; Delay; Dielectric constant; Dielectric films; Dielectric materials; Silicon compounds; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2003 International Symposium on
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-7765-6
  • Type

    conf

  • DOI
    10.1109/VTSA.2003.1252600
  • Filename
    1252600