DocumentCode
2395327
Title
Anisotropic thermal conductivity of nano-porous silica film
Author
Tsui, Bing-Yue ; Yang, Chen-Chi ; Fang, Kuo-Lung
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2003
fDate
2003
Firstpage
251
Lastpage
254
Abstract
In this work thermal conductivity of porous silica film was studied comprehensively. Silica films with porosity from 21% to 64% were spin coated. It is observed for the first time that the porous silica material has strong anisotropic characteristic. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. We proposed a serial-parallel hybrid model to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the RC delay simulation of the circuits.
Keywords
dielectric thin films; nanoporous materials; permittivity; porosity; silicon compounds; spin coating; thermal conductivity; RC delay simulation; SiO2; anisotrophic thermal conductivity; anisotropic dielectric constant; dielectric film; nanoporous silica film; serial-parallel hybrid model; spin coating; Anisotropic conductive films; Anisotropic magnetoresistance; Circuit simulation; Conducting materials; Delay; Dielectric constant; Dielectric films; Dielectric materials; Silicon compounds; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252600
Filename
1252600
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