DocumentCode :
2395327
Title :
Anisotropic thermal conductivity of nano-porous silica film
Author :
Tsui, Bing-Yue ; Yang, Chen-Chi ; Fang, Kuo-Lung
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2003
fDate :
2003
Firstpage :
251
Lastpage :
254
Abstract :
In this work thermal conductivity of porous silica film was studied comprehensively. Silica films with porosity from 21% to 64% were spin coated. It is observed for the first time that the porous silica material has strong anisotropic characteristic. The pores in the higher porosity silica film tend to distribute horizontally. This distribution of the pores in the dielectric film is the main factor that induces the anisotropic characteristic. We proposed a serial-parallel hybrid model to explain the correlation between porosity and thermal conductivity in both in-plane and cross-plane components. The anisotropic characteristic of the thermal conductivity may be accompanied by the anisotropic dielectric constant, which will greatly complicate the RC delay simulation of the circuits.
Keywords :
dielectric thin films; nanoporous materials; permittivity; porosity; silicon compounds; spin coating; thermal conductivity; RC delay simulation; SiO2; anisotrophic thermal conductivity; anisotropic dielectric constant; dielectric film; nanoporous silica film; serial-parallel hybrid model; spin coating; Anisotropic conductive films; Anisotropic magnetoresistance; Circuit simulation; Conducting materials; Delay; Dielectric constant; Dielectric films; Dielectric materials; Silicon compounds; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN :
1524-766X
Print_ISBN :
0-7803-7765-6
Type :
conf
DOI :
10.1109/VTSA.2003.1252600
Filename :
1252600
Link To Document :
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