Title :
III-V compund based heterostructure opto-thyristor for pulsed power applications
Author :
Hur, J.H. ; Hadizad, P. ; Zhao, Hang ; Hummel, S. ; Osinski, J.S. ; Dapkus, P.D. ; Fetterman, H.R. ; Gundersen, M.A.
Author_Institution :
University of Southern California
Abstract :
An analysis od III-V compound based eterostructure opto-thyristor (HOT) for pulsed power switching application which require gate isolation, fast current rate of rise, and high gating gain is presented. Design, fabrication, and performance of the device are discussed. The device has AlGaAs/GaAs heterojunction whigh allows an efficient coupling of gatin light to the critical region of the device, thus improving the gating gain and the current rate of rise.
Keywords :
Cathodes; Circuits; Diode lasers; Gallium arsenide; Heterojunctions; III-V semiconductor materials; MOCVD; Optical fiber devices; Photonic band gap; Pulse measurements;
Conference_Titel :
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0177-3
DOI :
10.1109/PPC.1991.733268
