DocumentCode
2395350
Title
ZnSe photoconductive switches with transparent electrodes
Author
Cho, P.S. ; Peng, F. ; Ho, P.-T. ; Goldhar, J. ; Lee, Chi H.
Author_Institution
University of Maryland
fYear
1991
fDate
16-19 June 1991
Firstpage
209
Lastpage
212
Abstract
High voltage photoconductive switches utilizing polycrystalline ZnSe are investigated. Experiments have been performed on longitudinal geometry ZnSe switches with perforated metal film electrodes, transparent electrolyte and plasma electrode. High bias fields up to 100 kV/cm and current densities in excess of 100 kA/cm/sup 2/ can be obtained in our ZnSe switches. Novel applications of hte switch which utilize nonlinear behavior at high fields are discussed.
Keywords
Chemical lasers; Current density; Electrodes; Optical attenuators; Optical switches; Photoconductivity; Photonic band gap; Power semiconductor switches; Voltage; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0177-3
Type
conf
DOI
10.1109/PPC.1991.733269
Filename
733269
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