Extraction of Microwave FET Noise Parameters Using Frequency- Dependent Equivalent Noise Temperatures

Author

Ciccognani, W. ; Giannini, F. ; Limiti, E. ; Nanni, A. ; Serino, A. ; Lanzieri, C. ; Peroni, M.

Author_Institution

Univ. of Rome Tor Vergata, Roma

fYear

2007

fDate

Oct. 29 2007-Nov. 1 2007

Firstpage

856

Lastpage

860

Abstract

A method for determining the noise parameters of high frequency field-effect transistors is presented. It has been developed by expressing the chain correlation matrix of the device as a function of its H-parameters and two frequency- dependent equivalent noise temperatures. The noise temperatures are determined utilizing the H-parameters and the 50 Omega noise figure of the device measured at a number of frequency points. The extraction of the small-signal equivalent circuit model of the device is therefore not required. A good agreement with the results of a well-established method is demonstrated in a wide range of frequencies.

Keywords

circuit noise; correlation methods; equivalent circuits; field effect transistors; matrix algebra; microwave circuits; chain correlation matrix; field-effect transistors; frequency-dependent equivalent noise temperatures; microwave FET noise parameters extraction; small-signal equivalent circuit model; Circuit noise; Equivalent circuits; Frequency measurement; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Semiconductor device noise; Temperature dependence; Tuners; Amplifier noise; equivalent circuits; microwave transistors; modeling; noise; noise measurements; semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International

Conference_Location

Brazil

Print_ISBN

978-1-4244-0661-6

Electronic_ISBN

978-1-4244-0661-6

Type

conf

DOI

10.1109/IMOC.2007.4404392

Filename

4404392