DocumentCode
2395369
Title
Algorithm for evaluating nodal vector quantities in device simulation and its applications to modeling quantum mechanical effects in sub-50nm MOSFETs
Author
Yu, Zhiping ; Yergeau, Daniel W. ; Dutton, Robert W.
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2003
fDate
2003
Firstpage
261
Lastpage
264
Abstract
An accurate and general algorithm for evaluating vector quantities, such as electric field, at the nodes in a finite volume discretization is presented. The algorithm is based on the integral form of Poisson´s and the carrier continuity equations. Application to the analysis of sub-50nm MOSFETs with quantum mechanical (QM) effects is demonstrated. Other applications include the coupled electrothermal simulation (Joule heat) and modeling of impact ionization.
Keywords
MOSFET; Poisson equation; semiconductor device models; 50 nm; MOSFET; Poissons equation; carrier continuity equation; device simulation; electrothermal simulation; finite volume discretization; nodal vector quantities; quantum mechanical effects; Current density; Electrothermal effects; Gaussian processes; Impact ionization; Integral equations; MOSFETs; Microelectronics; Poisson equations; Quantum mechanics; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2003 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-7765-6
Type
conf
DOI
10.1109/VTSA.2003.1252603
Filename
1252603
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