Algorithm for evaluating nodal vector quantities in device simulation and its applications to modeling quantum mechanical effects in sub-50nm MOSFETs

An accurate and general algorithm for evaluating vector quantities, such as electric field, at the nodes in a finite volume discretization is presented. The algorithm is based on the integral form of Poisson´s and the carrier continuity equations. Application to the analysis of sub-50nm MOSFETs with quantum mechanical (QM) effects is demonstrated. Other applications include the coupled electrothermal simulation (Joule heat) and modeling of impact ionization.