Title :
CMOS RF amplifier with tunable band-selection and image rejection
Author :
Thanachayanont, A. ; Sae-Ngow, S.
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
Abstract :
This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, low-noise amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the source-degeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-μm CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.
Keywords :
CMOS analogue integrated circuits; band-pass filters; circuit tuning; radiofrequency amplifiers; superheterodyne receivers; 0.35 micron; 30 dB; CMOS RF amplifier; bandpass filters; bridge-T notch; image rejection filter; image suppression; inductorless amplifiers; low noise amplifier; passband gain; source degeneration; superheterodyne RF receiver; tunable band selection; Band pass filters; CMOS technology; Circuit simulation; Circuit topology; Low-noise amplifiers; Passband; Radio frequency; Radiofrequency amplifiers; Shape control; Tunable circuits and devices;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252609
