CMOS RF amplifier with tunable band-selection and image rejection

Author

Thanachayanont, A. ; Sae-Ngow, S.

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand

fYear

2003

fDate

2003

Firstpage

284

Lastpage

287

Abstract

This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, low-noise amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the source-degeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-μm CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.

Keywords

CMOS analogue integrated circuits; band-pass filters; circuit tuning; radiofrequency amplifiers; superheterodyne receivers; 0.35 micron; 30 dB; CMOS RF amplifier; bandpass filters; bridge-T notch; image rejection filter; image suppression; inductorless amplifiers; low noise amplifier; passband gain; source degeneration; superheterodyne RF receiver; tunable band selection; Band pass filters; CMOS technology; Circuit simulation; Circuit topology; Low-noise amplifiers; Passband; Radio frequency; Radiofrequency amplifiers; Shape control; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2003 International Symposium on

ISSN

1524-766X

Print_ISBN

0-7803-7765-6

Type

conf

DOI

10.1109/VTSA.2003.1252609

Filename

1252609