Title :
Hot-carrier-induced degradation on 0.1μm partially depleted SOI CMOSFET
Author :
Wang, Wen-Han ; Yeh, Wen-Kuan ; Fang, Yean-Kuen ; Yang, Fu-Liang
Author_Institution :
Inst. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for 0.1μm CMOSFET with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition of the 0.1μm FB-SOI pMOSFET is similar to that of the 0.1μm BC-SOI pMOSFET.
Keywords :
MOSFET; elemental semiconductors; hot carriers; silicon-on-insulator; tunnelling; 0.1 micron; 2 nm; Si; floating body effect; hot carrier induced degradation; parasitic bipolar transistor effect; partially depleted SOI CMOSFET; valence band electron tunneling; Degradation; Electrons; Hot carriers; Interface states; MOSFET circuits; Phonons; Stress; Temperature; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2003 International Symposium on
Print_ISBN :
0-7803-7765-6
DOI :
10.1109/VTSA.2003.1252611