An empirical nonlinear MESFET model based on multi-bias measurements

Author

Abdallah, Esmat A. ; El-Tager, Ayman M.

Author_Institution

Electron. Res. Inst., Nat. Res. Centre, Cairo, Egypt

Volume

1

fYear

1999

fDate

1999

Firstpage

100

Abstract

A successful modeling technique that leads to a highly accurate nonlinear MESFET model is presented. This model is implemented based on accurate device measurements at different bias voltages using an HP8510C network analyzer. The parameters of the most commonly used nonlinear empirical models like Curtice quadratic, Curtice cubic and Statz models are extracted using GASMAP and FETMEX programs. The best model has been determined and tested for DC and AC operation through computer simulation, which gave more accurate results than existing models. Then, it has been successfully applied in the design and realization of a microstrip oscillator at 8.5 GHz

Keywords

Schottky gate field effect transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 8.5 GHz; AC operation; Curtice cubic model; Curtice quadratic model; DC operation; FETMEX program; GASMAP program; HP8510C network analyzer; MESFET; Statz model; computer simulation; empirical nonlinear model; large-signal characteristics; microstrip oscillator; microwave design system; multi-bias measurements; parameter extraction; semiconductor device; Databases; Electronic mail; Frequency; MESFETs; Microstrip; Microwave oscillators; Packaging; Scattering parameters; Tiles; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867062

Filename

867062