Title :
An empirical nonlinear MESFET model based on multi-bias measurements
Author :
Abdallah, Esmat A. ; El-Tager, Ayman M.
Author_Institution :
Electron. Res. Inst., Nat. Res. Centre, Cairo, Egypt
Abstract :
A successful modeling technique that leads to a highly accurate nonlinear MESFET model is presented. This model is implemented based on accurate device measurements at different bias voltages using an HP8510C network analyzer. The parameters of the most commonly used nonlinear empirical models like Curtice quadratic, Curtice cubic and Statz models are extracted using GASMAP and FETMEX programs. The best model has been determined and tested for DC and AC operation through computer simulation, which gave more accurate results than existing models. Then, it has been successfully applied in the design and realization of a microstrip oscillator at 8.5 GHz
Keywords :
Schottky gate field effect transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 8.5 GHz; AC operation; Curtice cubic model; Curtice quadratic model; DC operation; FETMEX program; GASMAP program; HP8510C network analyzer; MESFET; Statz model; computer simulation; empirical nonlinear model; large-signal characteristics; microstrip oscillator; microwave design system; multi-bias measurements; parameter extraction; semiconductor device; Databases; Electronic mail; Frequency; MESFETs; Microstrip; Microwave oscillators; Packaging; Scattering parameters; Tiles; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867062
