Title :
MMIC wideband low noise amplifier
Author :
Luqueze, M.A. ; Consonni, D. ; Yamada, C.Y.
Author_Institution :
Lab. de Microelectron., Sao Paulo Univ., Brazil
Abstract :
This work describes the development of a monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) based on a 40 GHz PHEMT (pseudomorphic high electron mobility transistor) GaAs technology. The circuit operates from 16 to 25 GHz band, with gain greater than 14 dB and noise figure lower than 3 dB. The performance of the MMIC amplifier mounted in a commercial ceramic package is also presented
Keywords :
III-V semiconductors; MMIC amplifiers; ceramic packaging; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit noise; integrated circuit packaging; wideband amplifiers; 0.2 micron; 105 mW; 14 dB; 16 to 25 GHz; 3 dB; 40 GHz; 9 GHz; GaAs; GaAs PHEMT technology; MMIC wideband LNA; commercial ceramic package; high electron mobility transistor; low noise amplifier; monolithic microwave integrated circuit; pseudomorphic HEMT technology; Broadband amplifiers; Electron mobility; HEMTs; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867105
