DocumentCode
2396554
Title
Modeling of Concentration Profiles Redistribution of Alloying Impurity at Local Oxidation of Silicon
Author
Berezhansky, Volodymyr
Author_Institution
Precarpathian Nat. Univ., lvano-Frankivsk
fYear
2006
fDate
Feb. 28 2006-March 4 2006
Firstpage
120
Lastpage
120
Abstract
The mathematical models of technological processes of designing and forming of device structures integrated circuits (IC) in present paper. Modeling distribution of concentration profiles for different types of technological processes is realized.
Keywords
alloying; impurities; oxidation; silicon; Si - Element; alloying impurity; concentration profiles redistribution; integrated circuit device structures; mathematical models; silicon local oxidation; technological process; Alloying; Doping; Impurities; Integrated circuit modeling; Integrated circuit technology; Mathematical model; Oxidation; Process design; Semiconductor process modeling; Silicon; The concentration profiles; clusterization; diffusive-oxidizing process; precipitation; technological process;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
Conference_Location
Lviv-Slavsko
Print_ISBN
966-553-507-2
Type
conf
DOI
10.1109/TCSET.2006.4404467
Filename
4404467
Link To Document