Title :
Modeling of Concentration Profiles Redistribution of Alloying Impurity at Local Oxidation of Silicon
Author :
Berezhansky, Volodymyr
Author_Institution :
Precarpathian Nat. Univ., lvano-Frankivsk
fDate :
Feb. 28 2006-March 4 2006
Abstract :
The mathematical models of technological processes of designing and forming of device structures integrated circuits (IC) in present paper. Modeling distribution of concentration profiles for different types of technological processes is realized.
Keywords :
alloying; impurities; oxidation; silicon; Si - Element; alloying impurity; concentration profiles redistribution; integrated circuit device structures; mathematical models; silicon local oxidation; technological process; Alloying; Doping; Impurities; Integrated circuit modeling; Integrated circuit technology; Mathematical model; Oxidation; Process design; Semiconductor process modeling; Silicon; The concentration profiles; clusterization; diffusive-oxidizing process; precipitation; technological process;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
Conference_Location :
Lviv-Slavsko
Print_ISBN :
966-553-507-2
DOI :
10.1109/TCSET.2006.4404467
