Title :
Statistical approach for improving manufacturing yield in advanced IC fabrication
Author :
Carlson, Arvid C. ; Sundaran, S.L.
Author_Institution :
Motorola Inc.. Mesa, AZ, USA
Abstract :
The methods of planned experimentation, statistical error propagation, multi-vari and Pareto are discussed in terms of scaled-high-voltage analog BiMOS technology and advanced analog IC manufacturing. Applications of statistical techniques using response surface methodology, planned experimentation, statistical-error propagation, multi-vari and Pareto analysis are shown to enhance the definition, optimization, and resolution of complex processing and device problems. The multidisciplinary approach, which involves statistics, device physics, process characterization, device characterization, and manufacturing, plays a major role in the introduction of new IC technology and yield improvements in IC products. The case studies presented demonstrate the essential need for a statistical approach to solve complex IC manufacturing problems
Keywords :
BIMOS integrated circuits; integrated circuit manufacture; linear integrated circuits; statistical analysis; Pareto; advanced IC fabrication; analog IC manufacturing; device characterization; device physics; manufacturing yield; multi-vari; planned experimentation; process characterization; response surface methodology; scaled-high-voltage analog BiMOS technology; statistical approach; statistical error propagation; statistical techniques; Analog integrated circuits; Conductivity; Costs; Epitaxial growth; Fabrication; Manufacturing processes; Optimization methods; Statistical analysis; Substrates; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1991. ASMC 91 Proceedings. IEEE/SEMI 1991
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-0152-8
DOI :
10.1109/ASMC.1991.167376