DocumentCode :
2398532
Title :
Characterizing a titanium nitride reactive deposition process using design of experiments
Author :
Berti, Antonio ; Ramírez, José
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fYear :
1991
fDate :
21-23 Oct 1991
Firstpage :
179
Lastpage :
184
Abstract :
The authors outline the successful application of design of experiments in the characterization of a titanium nitride deposition process. As a result of using two central composite designs the characterization was performed in less than one third of the time that a similar characterization had taken using one factor at a time experimentation. This resulted in savings of manpower, equipment time, and materials. The process throughput was quadrupled and the titanium nitride uniformity was improved by 60%, while the resistivity and the stress of the film was reduced. Furthermore, a reduction in setup times was achieved because this single set of deposition parameters satisfies the requirements of four distinct applications, which previously required two sets of deposition parameters
Keywords :
VLSI; integrated circuit manufacture; metallisation; sputter deposition; titanium compounds; TiN deposition process; ULSI interconnect; VLSI interconnect; characterization; composite designs; design of experiments; process throughput; reactive deposition process; set of deposition parameters; Aluminum; Cathodes; Compressive stress; Conductivity; Process design; Sputtering; Throughput; Tin; Titanium; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1991. ASMC 91 Proceedings. IEEE/SEMI 1991
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-0152-8
Type :
conf
DOI :
10.1109/ASMC.1991.167406
Filename :
167406
Link To Document :
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