Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 μm vertical cavity surface emitting lasers

Author

Lott, J.A. ; Ledentsov, N.N. ; Kovsh, A.R. ; Ustinov, V.M. ; Bimberg, D.

Author_Institution

Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

499

Abstract

In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit at a peak wavelength of 1.3 μm with a typical room temperature continuous-wave output power of up to 1.5 mW. This is the first report of InAs/InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor distributed Bragg reflectors, emitting at 1.3 μm.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; electroluminescence; gallium arsenide; indium compounds; infrared spectra; microcavity lasers; optical fabrication; optical multilayers; quantum dot lasers; semiconductor quantum dots; surface emitting lasers; 1.3 micron; 1.5 mW; 293 to 298 K; GaAs; InAs-InGaAs; InAs-InGaAs quantum dots multiple stacks; VCSEL performance; all-semiconductor distributed Bragg reflector; continuous-wave output power; quantum dot vertical cavity surface emitting lasers design; room temperature; Gallium arsenide; Indium gallium arsenide; Optical design; Power generation; Power lasers; Quantum dot lasers; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252892

Filename

1252892