DocumentCode
2398958
Title
A Stacked FET Switch for use in a 20 kV Klystron Modulator
Author
Figley, C. ; Stensrud, D.
Author_Institution
University of Saskatchewan
fYear
1991
fDate
16-19 June 1991
Firstpage
1001
Lastpage
1004
Abstract
This paper describes a simple high voltage modulator incorporating a stacked power field effect transistor (FET) switch structure. The switch was prototyped and tested under various operating conditions to evaluate durability and performance. Several small, but significant changes to the standard series connected FET switch implementation were, added to improve the performance, lifetime and utility in service conditions. The basic modulator was developed to drive a klystron or TWT amplifier tube requiring a pulse of up to 20 kV and 10 A.
Keywords
FETs; Klystrons; Laboratories; Prototypes; Pulse amplifiers; Pulse modulation; Pulse transformers; Switches; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-0177-3
Type
conf
DOI
10.1109/PPC.1991.733455
Filename
733455
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