Title :
A Stacked FET Switch for use in a 20 kV Klystron Modulator
Author :
Figley, C. ; Stensrud, D.
Author_Institution :
University of Saskatchewan
Abstract :
This paper describes a simple high voltage modulator incorporating a stacked power field effect transistor (FET) switch structure. The switch was prototyped and tested under various operating conditions to evaluate durability and performance. Several small, but significant changes to the standard series connected FET switch implementation were, added to improve the performance, lifetime and utility in service conditions. The basic modulator was developed to drive a klystron or TWT amplifier tube requiring a pulse of up to 20 kV and 10 A.
Keywords :
FETs; Klystrons; Laboratories; Prototypes; Pulse amplifiers; Pulse modulation; Pulse transformers; Switches; Testing; Voltage;
Conference_Titel :
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0177-3
DOI :
10.1109/PPC.1991.733455
