Title :
A sub 2ns ECL to CMOS level converter in 1μm BiCMOS technology
Author :
Müllner, E. ; Krebs, R. ; Ruge, I.
Author_Institution :
Siemens AG, Tech. Univ. Munchen, Munich, Germany
Abstract :
A new circuit for level conversion in BiCMOS technology is proposed in this paper. This circuit converts signals from an ECL environment using a bipolar voltage controlled current source followed by a CMOS current controlled voltage source. This scheme provides both high speed and low sensitivity to parameter variation at a moderate power consumption. Simulation shows, that delaytimes less than 2ns in a 1 μm technology can be achieved for loads of 500fF at a power consumption of 5mW.
Keywords :
BiCMOS digital integrated circuits; emitter-coupled logic; low-power electronics; BiCMOS technology; CMOS current controlled voltage source; CMOS level converter; ECL environment; bipolar voltage controlled current source; capacitance 500 fF; level conversion; power 5 mW; power consumption; size 1 mum; BiCMOS integrated circuits; CMOS process; CMOS technology; Energy consumption; Feedback; High speed integrated circuits; Integrated circuit technology; Low voltage; Temperature sensors; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1989. ESSCIRC '89. Proceedings of the 15th European
Conference_Location :
Vienna
Print_ISBN :
3-85403-101-7
DOI :
10.1109/ESSCIRC.1989.5468116
