Low resistance anodized Ta/TaN line TFT-LCD

Author

Ikeda, Makoto ; Murooka, Michio ; Higuchi, Masanori ; Taniguchi, Yasuyuki ; Nishimura, Kazunari

Author_Institution

Toshiba R&D Centre, Kawasaki, Japan

fYear

1991

fDate

15-17 Oct. 1991

Firstpage

93

Lastpage

96

Abstract

A low-resistance address and Cs lines were realized using a double-layer structure of alpha -Ta on TaN film, which had one-seventh of the conventional Ta resistivity. Point defects in TFT-LCDs (thin-film transistor liquid crystal displays), due to short circuits between pixel electrode and the Cs line, were decreased by a small leak current and pinhole-free anodic oxide film on Ta/TaN/sub x/. As a result, the PCVD (plasma chemical vapor deposition) machine running time can be increased, because TFT arrays become more dust tolerant.<>

Keywords

anodisation; liquid crystal displays; tantalum; tantalum compounds; thin film transistors; TFT-LCD; Ta-TaN line; active-matrix LCD; address line structure; double-layer structure; low-resistance address; pinhole-free anodic oxide film; plasma CVD; point defects; short circuits; small leak current; storage capacitance line; Capacitance; Circuits; Conductivity; Electrodes; Insulation; Laboratories; Leakage current; Manufacturing; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1991., Conference Record of the 1991 International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0213-3

Type

conf

DOI

10.1109/DISPL.1991.167441

Filename

167441