Title :
Progress Towards An MCT-based 100+ Kw High-frequency Inverter
Author :
Braun, C. ; Pastore, R.
Author_Institution :
Electronics Technology and Devices Laboratory
Abstract :
Significant progress has been recently made in achieving a 100+ kW level inverter using high-voltage diffusion-doped MOS Controlled Thyristors (MCTs). These MCTs are the deliverables from a three year contractual effort to extend the MCT technology to devices capable of switching high voltages/powers. Preliminary test results have shown that a single device can control/turn-off at least 160 kW average power (burst), handle a surge (single shot) turn-on of 15.5 kA at 1720 V for a peak switched power of 26 MW, and can be operated up to 50 kHz. Additionally, series operation of 3 MCTs to 5 kV, and parallel operation of 3 MCTs to 300 A turn-off have been demonstrated. Future work will deal with construction and evaluation of a high average power inverter using these MCT switches.
Keywords :
DC-DC power converters; Epitaxial layers; Frequency; Inverters; Laboratories; MOSFETs; Switches; Testing; Thyristors; Voltage;
Conference_Titel :
Pulsed Power Conference, 1991. Digest of Technical Papers. Eighth IEEE International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0177-3
DOI :
10.1109/PPC.1991.733457